Cree Inc. was founded in 1987 in the state of North Carolina (USA). The main direction of the company was and remains to this day the development and production of semiconductor materials based on silicon carbide (SiC). In the early 90s, the company began intensive research in the field of light-emitting structures made of gallium nitride (GaN) and solid solutions based on it on SiC substrates. Thanks to unique technologies for the production of semiconductor materials based on SiC, CREE products have the highest reliability and electrical characteristics unattainable for competitors, which allows them to be used in both household and industrial and space technology. Today, Cree is a world leader in silicon carbide single crystals and a leading manufacturer of SiC and GaN semiconductor devices on SiC substrates.